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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC508 DESCRIPTION With TO-66 package High collector-base breakdown voltage :VCBO=180V(min) APPLICATIONS For power switching and TV horizontal output applications. PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER SEM GE Open base CONDITIONS HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature OND IC TOR UC VALUE 180 60 6 4 UNIT V V V A W ae ae Open emitter Open collector TC=25ae 25 150 -65~200 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC508 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=30mA; IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 180 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=4A; IB=0.4 A 1.5 V VBEsat Base-emitter saturation voltage IC=4A; IB=0.4 A 1.5 V ICBO Collector cut-off current VCB=180V;IE=0 100 |I A IEBO hFE Emitter cut-off current DC current gain VEB=6V; IC=0 IC=4A ; VCE=5V HAN INC SEM GE OND IC 20 TOR UC 100 |I A 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC508 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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